Nonhysteretic Condition in Negative Capacitance Junctionless FETs
نویسندگان
چکیده
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness ferroelectric layers giving rise to behavior. The impact technological parameters is investigated in order ensure hysteresis-free operation. Finally, NCDG JLFET predicted over wide range temperatures 77K 400K. approach has been assessed with numerical TCAD simulations.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2022
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3133193